PBSS305ND,115 Overview
DC current gain in this device equals 170 @ 500mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 360mV @ 400mA, 4A.Emitter base voltages of 5V can achieve high levels of efficiency.There is a transition frequency of 140MHz in the part.Single BJT transistor can take a breakdown input voltage of 100V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
PBSS305ND,115 Features
the DC current gain for this device is 170 @ 500mA 2V
the vce saturation(Max) is 360mV @ 400mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 140MHz
PBSS305ND,115 Applications
There are a lot of Nexperia USA Inc. PBSS305ND,115 applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
