BC847BWT1G Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.Input voltage breakdown is available at 45V volts.The maximum collector current is 100mA volts.
BC847BWT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847BWT1G Applications
There are a lot of ON Semiconductor BC847BWT1G applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
