MMBT3904L RFG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
MMBT3904L RFG Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
MMBT3904L RFG Applications
There are a lot of Taiwan Semiconductor Corporation MMBT3904L RFG applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
