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MJW18020G

MJW18020G

MJW18020G

ON Semiconductor

MJW18020G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJW18020G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Through Hole
Package / Case TO-247-3
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureHIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC 450V
Max Power Dissipation250W
Peak Reflow Temperature (Cel) 260
Current Rating20A
Frequency 13MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation250W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product13MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1kV
Max Collector Current 30A
DC Current Gain (hFE) (Min) @ Ic, Vce 14 @ 3A 5V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-247AD
Vce Saturation (Max) @ Ib, Ic 1.5V @ 4A, 20A
Collector Emitter Breakdown Voltage450V
Transition Frequency 13MHz
Collector Emitter Saturation Voltage1.15V
Max Breakdown Voltage 150V
Collector Base Voltage (VCBO) 1kV
Emitter Base Voltage (VEBO) 9V
hFE Min 14
Height 21.08mm
Length 16.26mm
Width 5.3mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:833 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$7.38000$7.38
30$6.39133$191.7399
120$5.58317$669.9804
510$4.89488$2496.3888

MJW18020G Product Details

MJW18020G Overview


In this device, the DC current gain is 14 @ 3A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 1.15V, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 4A, 20A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (20A).As a result, the part has a transition frequency of 13MHz.Input voltage breakdown is available at 150V volts.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.

MJW18020G Features


the DC current gain for this device is 14 @ 3A 5V
a collector emitter saturation voltage of 1.15V
the vce saturation(Max) is 1.5V @ 4A, 20A
the emitter base voltage is kept at 9V
the current rating of this device is 20A
a transition frequency of 13MHz

MJW18020G Applications


There are a lot of ON Semiconductor MJW18020G applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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