PBHV9215Z,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 80 @ 1A 10V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 400mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.As you can see, the part has a transition frequency of 35MHz.Single BJT transistor can be broken down at a voltage of 150V volts.During maximum operation, collector current can be as low as 2A volts.
PBHV9215Z,115 Features
the DC current gain for this device is 80 @ 1A 10V
the vce saturation(Max) is 350mV @ 400mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 35MHz
PBHV9215Z,115 Applications
There are a lot of Nexperia USA Inc. PBHV9215Z,115 applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
