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AFGHL75T65SQD

AFGHL75T65SQD

AFGHL75T65SQD

ON Semiconductor

AFGHL75T65SQD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

AFGHL75T65SQD Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Operating Temperature-55°C~175°C TJ
Series Automotive, AEC-Q101
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) Not Applicable
Input Type Standard
Power - Max 375W
Reverse Recovery Time 36ns
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 80A
Test Condition 400V, 75A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
IGBT Type Trench Field Stop
Gate Charge136nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 25ns/106ns
Switching Energy 1.86mJ (on), 1.13mJ (off)
RoHS StatusROHS3 Compliant
In-Stock:1227 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.90000$6.9
500$6.831$3415.5
1000$6.762$6762
1500$6.693$10039.5
2000$6.624$13248
2500$6.555$16387.5

AFGHL75T65SQD Product Details

AFGHL75T65SQD Description


Utilizing cutting-edge 4th generation high-speed IGBT technology with field stop. The AEC Q101 approved AFGHL75T65SQD provides the best performance for both hard and soft switching topologies in automotive applications.



AFGHL75T65SQD Features


  • AEC?Q101 Qualified

  • Maximum Junction Temperature: TJ = 175°C

  • Positive Temperature Co?efficient for Easy Parallel Operating

  • High Current Capability

  • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A

  • 100% of the Parts are Tested for ILM (Note 2)

  • Fast Switching

  • Tight Parameter Distribution

  • RoHS Compliant



AFGHL75T65SQD Applications


  • Automotive HEV?EV Onboard Chargers

  • Automotive HEV?EV DC?DC Converters

  • Totem Pole Bridgeless PFC


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