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FGAF40N60SMD

FGAF40N60SMD

FGAF40N60SMD

ON Semiconductor

FGAF40N60SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGAF40N60SMD Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Number of Pins 3
Weight 6.962g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation115W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element ConfigurationSingle
Case Connection ISOLATED
Input Type Standard
Power - Max 115W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 36 ns
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.1V
Turn On Time37 ns
Test Condition 400V, 40A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 40A
Turn Off Time-Nom (toff) 132 ns
IGBT Type Field Stop
Gate Charge119nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 12ns/92ns
Switching Energy 870μJ (on), 260μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 17ns
Height 26.7mm
Length 15.7mm
Width 3.2mm
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1219 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.84000$4.84
10$4.34800$43.48
360$3.37994$1216.7784
720$3.03282$2183.6304

FGAF40N60SMD Product Details

FGAF40N60SMD Description


ON semiconductor's new series of field stop 2nd generation IGBTs, which use revolutionary field stop IGBT technology, provide the best performance for solar inverter, UPS, welder, and PFC applications that require low conduction and switching losses.



FGAF40N60SMD Features


?TJ = 175oC Maximum Junction Temperature


? Positive Temperature Coefficient for Ease of Parallelism


? High Capacity for Current


? Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ 40 A IC


? Input Impedance Impedance Impedance Impedance Impedance Impedance


? EOFF = 6.5 uJ/A for fast switching


? The Distribution of Parameters Has Been Tightened


? Compliant with RoHS



FGAF40N60SMD Applications


CNC Sewing Machine


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