STGB19NC60KT4

Name: STGB19NC60KT4
Brand: STMicroelectronics
SKU: STGB19NC60KT4
Price: 2.78000 USD
Availability: InStock

new-10%

Manufacturer part number:STGB19NC60KT4

Manufacturer:STMicroelectronics

Description:STGB19NC60KT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB19NC60KT4 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	125W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGB19
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	125W
Input Type	Standard
Turn On Delay Time	30 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	125 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	35A
Collector Emitter Breakdown Voltage	600V
Max Breakdown Voltage	600V
Turn On Time	38 ns
Test Condition	480V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.75V @ 15V, 12A
Turn Off Time-Nom (toff)	270 ns
Gate Charge	55nC
Current - Collector Pulsed (Icm)	75A
Td (on/off) @ 25°C	30ns/105ns
Switching Energy	165μJ (on), 255μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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