2SC5566-TD-E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 85V, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 225mV @ 100mA, 2A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 6V to gain high efficiency.There is a transition frequency of 400MHz in the part.There is a breakdown input voltage of 50V volts that it can take.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
2SC5566-TD-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 85V
the vce saturation(Max) is 225mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 400MHz
2SC5566-TD-E Applications
There are a lot of ON Semiconductor 2SC5566-TD-E applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
