2SC4027T-TL-E Overview
In this device, the DC current gain is 100 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of 130mV.A VCE saturation (Max) of 450mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Emitter base voltages of 6V can achieve high levels of efficiency.As a result, it can handle voltages as low as 160V volts.Collector current can be as low as 1.5A volts at its maximum.
2SC4027T-TL-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 450mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
2SC4027T-TL-E Applications
There are a lot of ON Semiconductor 2SC4027T-TL-E applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
