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STN93003

STN93003

STN93003

STMicroelectronics

STN93003 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

STN93003 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory Other Transistors
Max Power Dissipation1.6W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STN93
Pin Count4
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1.6W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) -400V
Max Collector Current -1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 16 @ 350mA 5V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 500mA
Collector Emitter Breakdown Voltage400V
Current - Collector (Ic) (Max) 1.5A
Collector Emitter Saturation Voltage-500mV
Max Breakdown Voltage 400V
Emitter Base Voltage (VEBO) -10V
hFE Min 16
Max Junction Temperature (Tj) 150°C
Height 1.9mm
Length 6.5mm
Width 3.5mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:9321 items

Pricing & Ordering

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STN93003 Product Details

STN93003 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 16 @ 350mA 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 500mA.With the emitter base voltage set at -10V, an efficient operation can be achieved.The breakdown input voltage is 400V volts.Maximum collector currents can be below -1.5A volts.

STN93003 Features


the DC current gain for this device is 16 @ 350mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 100mA, 500mA
the emitter base voltage is kept at -10V

STN93003 Applications


There are a lot of STMicroelectronics STN93003 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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