2SA1419S-TD-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 5V.With a collector emitter saturation voltage of -200mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 120MHz.Single BJT transistor can take a breakdown input voltage of 160V volts.A maximum collector current of 1.5A volts is possible.
2SA1419S-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SA1419S-TD-E Applications
There are a lot of ON Semiconductor 2SA1419S-TD-E applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
