2SB1215S-TL-E Overview
DC current gain in this device equals 140 @ 500mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -200mV, giving you a wide variety of design options.When VCE saturation is 500mV @ 150mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at -6V allows for a high level of efficiency.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
2SB1215S-TL-E Features
the DC current gain for this device is 140 @ 500mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 150mA, 1.5A
the emitter base voltage is kept at -6V
2SB1215S-TL-E Applications
There are a lot of ON Semiconductor 2SB1215S-TL-E applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
