2SA1416T-TD-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 5V.As it features a collector emitter saturation voltage of -600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.With the emitter base voltage set at 6V, an efficient operation can be achieved.In the part, the transition frequency is 120MHz.The maximum collector current is 1A volts.
2SA1416T-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 400mV @ 40mA, 400mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SA1416T-TD-E Applications
There are a lot of ON Semiconductor 2SA1416T-TD-E applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
