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2N6518TA

2N6518TA

2N6518TA

ON Semiconductor

2N6518TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N6518TA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Operating Temperature-55°C~150°C TJ
PackagingTape & Box (TB)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 2N6518
Power - Max 625mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 50mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 250V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 200MHz
In-Stock:147661 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.05000$0.05
500$0.0495$24.75
1000$0.049$49
1500$0.0485$72.75
2000$0.048$96
2500$0.0475$118.75

2N6518TA Product Details

2N6518TA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 45 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 5mA, 50mA.This product comes in a TO-92-3 device package from the supplier.Collector Emitter Breakdown occurs at 250VV - Maximum voltage.

2N6518TA Features


the DC current gain for this device is 45 @ 50mA 10V
the vce saturation(Max) is 1V @ 5mA, 50mA
the supplier device package of TO-92-3

2N6518TA Applications


There are a lot of ON Semiconductor 2N6518TA applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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