2N5884G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 10A 4V DC current gain.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 6.25A, 25A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -25A.Parts of this part have transition frequencies of 4MHz.Maximum collector currents can be below 25A volts.
2N5884G Features
the DC current gain for this device is 20 @ 10A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 4V @ 6.25A, 25A
the emitter base voltage is kept at 5V
the current rating of this device is -25A
a transition frequency of 4MHz
2N5884G Applications
There are a lot of ON Semiconductor 2N5884G applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
