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BCP56,115

BCP56,115

BCP56,115

Nexperia USA Inc.

BCP56,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCP56,115 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface MountYES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2011
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal FormGULL WING
Base Part Number BCP56
Pin Count4
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 960mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 1A
Transition Frequency 180MHz
Frequency - Transition 180MHz
RoHS StatusROHS3 Compliant
In-Stock:15394 items

Pricing & Ordering

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BCP56,115 Product Details

BCP56,115 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 63 @ 150mA 2V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.As you can see, the part has a transition frequency of 180MHz.The device has a 80V maximal voltage - Collector Emitter Breakdown.

BCP56,115 Features


the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 180MHz

BCP56,115 Applications


There are a lot of Nexperia USA Inc. BCP56,115 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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