2N5461 datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
SOT-23
2N5461 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Supplier Device Package
TO-92-3
Weight
201mg
Operating Temperature
-65°C~135°C TJ
Packaging
Bulk
Published
2006
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
10V
Max Power Dissipation
350mW
Current Rating
10mA
Base Part Number
2N5461
Element Configuration
Single
Power Dissipation
350mW
Power - Max
350mW
FET Type
P-Channel
Input Capacitance (Ciss) (Max) @ Vds
7pF @ 15V
Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Continuous Drain Current (ID)
10mA
Gate to Source Voltage (Vgs)
40V
Input Capacitance
7pF
Current - Drain (Idss) @ Vds (Vgs=0)
2mA @ 15V
Voltage - Cutoff (VGS off) @ Id
1V @ 1μA
Voltage - Breakdown (V(BR)GSS)
40V
Height
5.33mm
Length
5.2mm
Width
4.19mm
REACH SVHC
No SVHC
RoHS Status
Non-RoHS Compliant
Lead Free
Lead Free
In-Stock:2516 items
2N5461 Product Details
2N5461 Description
The ONSEMI 2N5461 Transistor is a P-channel JFET which has opposite current directions and voltage polarities when compared to the n-channel JFET designed primarily for low-level audio and general purpose applications with high impedance signal sources.
2N5461 Features
Pb-Free Packages are Available
Operating and Storage Junction Temperature Range -55 to +150℃
Drain-Gate Voltage... - 40 V
VGS Gate-Source Voltage... 40 V
2N5461 Applications
Analog switching and chopper applications
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