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2N5639_D75Z

2N5639_D75Z

2N5639_D75Z

ON Semiconductor

2N5639_D75Z datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

2N5639_D75Z Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature-55°C~150°C TJ
PackagingTape & Box (TB)
Published 2003
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 2N5639
Power - Max 350mW
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 10pF @ 12V VGS
Current - Drain (Idss) @ Vds (Vgs=0) 25mA @ 20V
Voltage - Breakdown (V(BR)GSS) 30V
Resistance - RDS(On) 60Ohm
In-Stock:4044 items

2N5639_D75Z Product Details

2N5639_D75Z Description


When using the MOSFET as a switch we can drive the MOSFET to turn ONfaster or slower, or pass high or low currents. This ability to turn the power MOSFET ONand OFFallows the device to be used as a very efficient switch with switching speeds much faster than standard bipolar junction transistors.


2N5639_D75Z Applications


? This device is designed for low level analog switchng, sample and hold

circuits and chopper stabilized amplifiers.

? Sourced from process 51.

2N5639_D75Z Features


? 2.85 V Output Voltage for SCSI?2 Active Termination

? 1.0 V Dropout

? Output Current in Excess of 800 mA

? Thermal Protection

? Short Circuit Protection


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