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PMBFJ174,215

PMBFJ174,215

PMBFJ174,215

NXP USA Inc.

PMBFJ174,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available on our website

SOT-23

PMBFJ174,215 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 1997
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code8541.21.00.95
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MBFJ174
Pin Count3
JESD-30 Code R-PDSO-G3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE
Operating ModeDEPLETION MODE
Power - Max 300mW
FET Type P-Channel
Transistor Application SWITCHING
Input Capacitance (Ciss) (Max) @ Vds 8pF @ 10V VGS
Drain-source On Resistance-Max 85Ohm
DS Breakdown Voltage-Min 30V
FET Technology JUNCTION
Power Dissipation-Max (Abs) 0.3W
Current - Drain (Idss) @ Vds (Vgs=0) 20mA @ 15V
Voltage - Cutoff (VGS off) @ Id 5V @ 10nA
Voltage - Breakdown (V(BR)GSS) 30V
Resistance - RDS(On) 85Ohm
RoHS StatusROHS3 Compliant
In-Stock:3988 items

PMBFJ174,215 Product Details

PMBFJ174,215 Description

Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.

PMBFJ174,215 Features


? Extremely Efficient Trench with Field Stop Technology

? Low VCE(sat) Loss Reduces System Power Dissipation

PMBFJ174,215 Applications


? Industrial Motor Drives

? Solar Inverters

? UPS Systems


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