KSK596PBWD datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
SOT-23
KSK596PBWD Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Short Body
Supplier Device Package
TO-92S
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2002
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSK596
Power - Max
100mW
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
3.5pF @ 5V
Current - Drain (Idss) @ Vds (Vgs=0)
100μA @ 5V
Voltage - Cutoff (VGS off) @ Id
600mV @ 1μA
Voltage - Breakdown (V(BR)GSS)
20V
Current Drain (Id) - Max
1mA
In-Stock:2405 items
KSK596PBWD Product Details
KSK596PBWD Description
KSK596PBWD is an N-channel JEFT transistor from the manufacturer ON Semiconductor with the breakdown voltage of 20V. The operating temperature of the KSK596PBWD is 150°C TJ and its maximum power dissipation is 100mW. KSK596PBWD has 3 pins and it is available in Bulk packaging way. The maximum current drain of KSK596PBWD is 1mA.
KSK596PBWD Features
Package / Case: TO-226-3, TO-92-3 Short Body
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Voltage - Cutoff (VGS off) @ Id: 600mV @ 1μA
Current Drain (Id) - Max: 1mA
Base Part Number: KSK596
KSK596PBWD Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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