NSVBSS63LT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 25mA 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 2.5mA, 25mA.During maximum operation, collector current can be as low as 100mA volts.
NSVBSS63LT1G Features
the DC current gain for this device is 30 @ 25mA 1V
the vce saturation(Max) is 250mV @ 2.5mA, 25mA
NSVBSS63LT1G Applications
There are a lot of ON Semiconductor NSVBSS63LT1G applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
