PBSS5480X,135 Overview
DC current gain in this device equals 150 @ 2A 2V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 380mV @ 500mA, 5A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The part has a transition frequency of 125MHz.Breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
PBSS5480X,135 Features
the DC current gain for this device is 150 @ 2A 2V
the vce saturation(Max) is 380mV @ 500mA, 5A
the emitter base voltage is kept at 5V
a transition frequency of 125MHz
PBSS5480X,135 Applications
There are a lot of Nexperia USA Inc. PBSS5480X,135 applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
