J175-D26Z datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
SOT-23
J175-D26Z Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
6 Weeks
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2015
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
J175
Power - Max
350mW
FET Type
P-Channel
FET Technology
JUNCTION
Power Dissipation-Max (Abs)
0.35W
Current - Drain (Idss) @ Vds (Vgs=0)
7mA @ 15V
Voltage - Cutoff (VGS off) @ Id
3V @ 10nA
Voltage - Breakdown (V(BR)GSS)
30V
Resistance - RDS(On)
125Ohm
RoHS Status
ROHS3 Compliant
In-Stock:14044 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
J175-D26Z Product Details
The J175-D26Z is a P-channel JFET (Junction Field Effect Transistor) manufactured by ON Semiconductor. It is a low-power, low-noise device designed for use in a variety of applications. It has a maximum drain-source voltage of 30V and a maximum power dissipation of 0.35W. The J175-D26Z is packaged in a TO-92 package, which is a small, three-pin package that is commonly used for small signal transistors.
Features of the J175-D26Z include low noise, low power consumption, and high input impedance. It also has a low gate-source capacitance, which makes it suitable for use in high-frequency applications. The J175-D26Z is also designed to be highly reliable and has a long operating life.
Applications of the J175-D26Z include audio amplifiers, signal switching, and voltage regulation. It can also be used in power management circuits, such as DC-DC converters and battery chargers. Additionally, it can be used in RF circuits, such as mixers and oscillators.
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