NXP3875YR Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 2mA 6V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 200mA in order to achieve high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 80MHz is present in the part.Collector current can be as low as 150mA volts at its maximum.
NXP3875YR Features
the DC current gain for this device is 120 @ 2mA 6V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 80MHz
NXP3875YR Applications
There are a lot of Nexperia USA Inc. NXP3875YR applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
