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MPS750RLRA

MPS750RLRA

MPS750RLRA

ON Semiconductor

MPS750RLRA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MPS750RLRA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e0
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating-2A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number MPS750
Pin Count3
JESD-30 Code O-PBCY-T3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Transistor Application AMPLIFIER
Gain Bandwidth Product75MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage40V
Current - Collector (Ic) (Max) 2A
Transition Frequency 75MHz
Collector Emitter Saturation Voltage500mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 75
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:76636 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.599960$0.59996
10$0.566000$5.66
100$0.533962$53.3962
500$0.503738$251.869
1000$0.475225$475.225

MPS750RLRA Product Details

MPS750RLRA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 75 @ 1A 2V.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 2A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Its current rating is -2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 75MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

MPS750RLRA Features


the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 75MHz

MPS750RLRA Applications


There are a lot of ON Semiconductor MPS750RLRA applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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