PBSS4140T,215 Overview
This device has a DC current gain of 300 @ 500mA 5V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100mA, 1A.Parts of this part have transition frequencies of 150MHz.The device exhibits a collector-emitter breakdown at 40V.
PBSS4140T,215 Features
the DC current gain for this device is 300 @ 500mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A
a transition frequency of 150MHz
PBSS4140T,215 Applications
There are a lot of Nexperia USA Inc. PBSS4140T,215 applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
