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2N5415

2N5415

2N5415

ON Semiconductor

2N5415 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N5415 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-39
Supplier Device Package TO-39
PackagingBulk
Published 2009
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 2N5415
Power - Max 1W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 200V
Current - Collector (Ic) (Max) 100mA
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:10574 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$21.69970$2169.97

2N5415 Product Details

Description


The 2N5415 is a -200V Silicon PNP Epitaxial Planar High Voltage Transistor for consumer and industrial applications. The transistor works well as a driver in high-voltage, low-current inverters, as well as switching and series regulators. Diodes and transistors both perform different types of switching operations in analog, digital, and mixed-signal circuits, and transistors can provide signal amplification when needed. At RF and microwave frequencies, many types of diodes and transistors are utilized, depending on the function and frequency range required.



Features


  • Collector-Emitter Volt (Vceo): 200V

  • Collector-Base Volt (Vcbo): 200V

  • Collector Current (Ic): 1.0A

  • Emitter-base voltage(Vebo = -4V)

  • hfe: 30-150 @ 50mA

  • Power Dissipation (Ptot): 1000mW

  • Current-Gain-Bandwidth (ftotal): 15MHz

  • Type: PNP



Applications


  • Consumer and industrial line-operated applications

  • Industrial

  • Consumer electronics

  • Amplifiers and switching apparatus

  • As switches


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