PBSS4032ND,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 2A 2V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 400mA, 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In the part, the transition frequency is 135MHz.A breakdown input voltage of 30V volts can be used.Collector current can be as low as 3.5A volts at its maximum.
PBSS4032ND,115 Features
the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 300mV @ 400mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 135MHz
PBSS4032ND,115 Applications
There are a lot of Nexperia USA Inc. PBSS4032ND,115 applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
