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JAN2N2222AL

JAN2N2222AL

JAN2N2222AL

Microsemi Corporation

JAN2N2222AL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N2222AL Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2007
Series Military, MIL-PRF-19500/255
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code8541.21.00.95
Max Power Dissipation500mW
Terminal Position BOTTOM
Terminal FormWIRE
Pin Count3
Reference Standard MIL-19500/255
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 500mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage50V
Collector Base Voltage (VCBO) 75V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:1142 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.855572$6.855572
10$6.467520$64.6752
100$6.101434$610.1434
500$5.756070$2878.035
1000$5.430255$5430.255

JAN2N2222AL Product Details

JAN2N2222AL Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.Maximum collector currents can be below 800mA volts.

JAN2N2222AL Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA

JAN2N2222AL Applications


There are a lot of Microsemi Corporation JAN2N2222AL applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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