2PB710ARL,235 Overview
This device has a DC current gain of 120 @ 150mA 10V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -600mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 30mA, 300mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.120MHz is present in the transition frequency.Collector current can be as low as 500mA volts at its maximum.
2PB710ARL,235 Features
the DC current gain for this device is 120 @ 150mA 10V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
a transition frequency of 120MHz
2PB710ARL,235 Applications
There are a lot of Nexperia USA Inc. 2PB710ARL,235 applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
