MMST8098T146 Overview
In this device, the DC current gain is 100 @ 1mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.In order to achieve high efficiency, the continuous collector voltage should be kept at 200mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
MMST8098T146 Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
MMST8098T146 Applications
There are a lot of ROHM Semiconductor MMST8098T146 applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
