Welcome to Hotenda.com Online Store!

logo
userjoin
Home

PBSS305PX,115

PBSS305PX,115

PBSS305PX,115

Nexperia USA Inc.

PBSS305PX,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS305PX,115 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation2.1W
Terminal FormFLAT
Frequency 100MHz
Base Part Number PBSS305P
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation2.1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 420mV @ 235mA, 4.7A
Collector Emitter Breakdown Voltage80V
Transition Frequency 100MHz
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 200
Turn Off Time-Max (toff) 285ns
Height 6.35mm
Length 12.7mm
Width 6.35mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:12426 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.876360$0.87636
10$0.826755$8.26755
100$0.779957$77.9957
500$0.735809$367.9045
1000$0.694159$694.159

PBSS305PX,115 Product Details

PBSS305PX,115 Overview


This device has a DC current gain of 120 @ 2A 2V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.In the part, the transition frequency is 100MHz.Single BJT transistor can be broken down at a voltage of 80V volts.In extreme cases, the collector current can be as low as 4A volts.

PBSS305PX,115 Features


the DC current gain for this device is 120 @ 2A 2V
the vce saturation(Max) is 420mV @ 235mA, 4.7A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

PBSS305PX,115 Applications


There are a lot of Nexperia USA Inc. PBSS305PX,115 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

Get Subscriber

Enter Your Email Address, Get the Latest News