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2SD1802T-E

2SD1802T-E

2SD1802T-E

ON Semiconductor

2SD1802T-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SD1802T-E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface MountNO
Number of Pins 3
Operating Temperature150°C TJ
PackagingBulk
Published 2011
JESD-609 Code e6
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Subcategory Other Transistors
Max Power Dissipation1W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number 2SD1802
Pin Count3
Configuration Single
Power - Max 1W
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 0.5mV @ 100mA, 2A
Collector Emitter Breakdown Voltage50V
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:29022 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.381311$2.381311
10$2.246520$22.4652
100$2.119358$211.9358
500$1.999395$999.6975
1000$1.886222$1886.222

2SD1802T-E Product Details

2SD1802T-E Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 100mA 2V DC current gain.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.

2SD1802T-E Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 0.5mV @ 100mA, 2A
the emitter base voltage is kept at 6V

2SD1802T-E Applications


There are a lot of ON Semiconductor 2SD1802T-E applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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