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BSR30,115

BSR30,115

BSR30,115

Nexperia USA Inc.

BSR30,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BSR30,115 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation1.35W
Terminal FormFLAT
Frequency 100MHz
Base Part Number BSR30
Pin Count3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1.35W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage60V
Transition Frequency 100MHz
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 70V
Emitter Base Voltage (VEBO) 5V
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:26507 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.389575$0.389575
10$0.367524$3.67524
100$0.346720$34.672
500$0.327095$163.5475
1000$0.308580$308.58

BSR30,115 Product Details

BSR30,115 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 100mA 5V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.Parts of this part have transition frequencies of 100MHz.The breakdown input voltage is 60V volts.Maximum collector currents can be below 1A volts.

BSR30,115 Features


the DC current gain for this device is 40 @ 100mA 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BSR30,115 Applications


There are a lot of Nexperia USA Inc. BSR30,115 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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