BCP56-10TX Overview
DC current gain in this device equals 63 @ 150mA 2V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can be broken down at a voltage of 80V volts.Product package SOT-223 comes from the supplier.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.Maximum collector currents can be below 1A volts.
BCP56-10TX Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of SOT-223
BCP56-10TX Applications
There are a lot of Nexperia USA Inc. BCP56-10TX applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
