SMMBT6427LT1G Overview
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 500μA, 500mA.An emitter's base voltage can be kept at 12V to gain high efficiency.A maximum collector current of 500mA volts can be achieved.
SMMBT6427LT1G Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
SMMBT6427LT1G Applications
There are a lot of ON Semiconductor SMMBT6427LT1G applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
