NSV12200LT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 500mA 2V.When VCE saturation is 180mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
NSV12200LT1G Features
the DC current gain for this device is 250 @ 500mA 2V
the vce saturation(Max) is 180mV @ 200mA, 2A
NSV12200LT1G Applications
There are a lot of ON Semiconductor NSV12200LT1G applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
