2DD1766P-13 Overview
In this device, the DC current gain is 82 @ 500mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 800mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Parts of this part have transition frequencies of 220MHz.This device can take an input voltage of 32V volts before it breaks down.Collector current can be as low as 2A volts at its maximum.
2DD1766P-13 Features
the DC current gain for this device is 82 @ 500mA 3V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 220MHz
2DD1766P-13 Applications
There are a lot of Diodes Incorporated 2DD1766P-13 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
