BC817W,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.As a result, the part has a transition frequency of 100MHz.The device exhibits a collector-emitter breakdown at 45V.
BC817W,115 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 100MHz
BC817W,115 Applications
There are a lot of Nexperia USA Inc. BC817W,115 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
