2PB709BRL,215 Overview
This device has a DC current gain of 210 @ 2mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.In this part, there is a transition frequency of 200MHz.Single BJT transistor can be broken down at a voltage of 50V volts.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
2PB709BRL,215 Features
the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 200MHz
2PB709BRL,215 Applications
There are a lot of Nexperia USA Inc. 2PB709BRL,215 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
