BD241CTU Overview
In this device, the DC current gain is 25 @ 1A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 1.2V, it offers maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 600mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In this part, there is a transition frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
BD241CTU Features
the DC current gain for this device is 25 @ 1A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
BD241CTU Applications
There are a lot of ON Semiconductor BD241CTU applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
