BC848CE6327HTSA1 Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.There is a transition frequency of 250MHz in the part.This device can take an input voltage of 30V volts before it breaks down.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC848CE6327HTSA1 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 250MHz
BC848CE6327HTSA1 Applications
There are a lot of Infineon Technologies BC848CE6327HTSA1 applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
