MMBT3906 Overview
This device has a DC current gain of 100 @ 10mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -400mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.The emitter base voltage can be kept at -5V for high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -200mA.There is a breakdown input voltage of 40V volts that it can take.Single BJT transistor comes in a supplier device package of SOT-23-3.There is a 40V maximal voltage in the device due to collector-emitter breakdown.A maximum collector current of -200mA volts can be achieved.
MMBT3906 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
the supplier device package of SOT-23-3
MMBT3906 Applications
There are a lot of ON Semiconductor MMBT3906 applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
