JAN2N3637UB Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 50mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.In extreme cases, the collector current can be as low as 1A volts.
JAN2N3637UB Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
JAN2N3637UB Applications
There are a lot of Microsemi Corporation JAN2N3637UB applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
