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2N3469

2N3469

2N3469

Microsemi Corporation

Bipolar Transistors - BJT Power BJT

SOT-23

2N3469 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Number of Pins 3
Transistor Element Material SILICON
PackagingBulk
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
HTS Code8541.29.00.95
Max Power Dissipation1.2W
Terminal Position BOTTOM
Terminal FormWIRE
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 5A
JEDEC-95 Code TO-5
DC Current Gain-Min (hFE) 100
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:684 items

Pricing & Ordering

QuantityUnit PriceExt. Price
105$9.28514$974.9397

About 2N3469

The 2N3469 from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features Bipolar Transistors - BJT Power BJT.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 2N3469, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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