NSS20501UW3TBG Overview
In this device, the DC current gain is 200 @ 2A 2V, which is the ratio between the base current and the collector current.When VCE saturation is 125mV @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.The part has a transition frequency of 150MHz.Collector current can be as low as 5A volts at its maximum.
NSS20501UW3TBG Features
the DC current gain for this device is 200 @ 2A 2V
the vce saturation(Max) is 125mV @ 400mA, 4A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
NSS20501UW3TBG Applications
There are a lot of ON Semiconductor NSS20501UW3TBG applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
