JANTXV2N5666S Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 1A 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 5A, 1A.An emitter's base voltage can be kept at 6V to gain high efficiency.When collector current reaches its maximum, it can reach 5A volts.
JANTXV2N5666S Features
the DC current gain for this device is 40 @ 1A 5V
the vce saturation(Max) is 1V @ 5A, 1A
the emitter base voltage is kept at 6V
JANTXV2N5666S Applications
There are a lot of Microsemi Corporation JANTXV2N5666S applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
