JAN2N2905A Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A transition frequency of 200MHz is present in the part.A maximum collector current of 600mA volts can be achieved.
JAN2N2905A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
JAN2N2905A Applications
There are a lot of Microsemi Corporation JAN2N2905A applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
