KSH45H11TM Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 4A 1V DC current gain.A collector emitter saturation voltage of -1V allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 400mA, 8A.An emitter's base voltage can be kept at -5V to gain high efficiency.This device has a current rating of -8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In this part, there is a transition frequency of 40MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 8A volts is possible.
KSH45H11TM Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
a transition frequency of 40MHz
KSH45H11TM Applications
There are a lot of ON Semiconductor KSH45H11TM applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
